Japan's Mitsubishi Chemical and Fuji Electric, Toyota Central Research Institute, Kyoto University, Industrial Technology Research Institute of the joint team successfully solved the GaN (GaN) chip on the formation of GaN components power semiconductor key technology. GaN power semiconductors are the next generation of silicon carbide power semiconductors. Japan has developed GaN component technology through the development of light-emitting diodes, and GaN chip production accounts for the highest share of the world. If the practical use of existing technology, will be in the world's dominant position.
Power semiconductor is conducive to home appliances, cars, trams and other energy-saving, industry demand is great. GaN power semiconductors, such as high-electron mobility transistors on silicon substrates, have been mass production. However, research on GaN-based metal-oxide semiconductor field-effect transistors (MOSFETs) for high-performance devices has just begun The The United States is also actively studying and intense competition in world development. igbt modules
Day joint team produced high-quality 2-inch GaN chips and MOSFETs. Mitsubishi Chemical for power semiconductor improved GaN chip production technology "ammonia heat method". Optimize the crystal growth conditions, the chip average defect density, reduced to the previous one hundredths, thousands of levels per square centimeter. Their 2018 annual goal is to further reduce the defect more than 1 digit, to achieve 4-inch large-size chip.
Fuji Electric and other production of MOSFET, component performance indicators of mobility than silicon carbide power semiconductor to ensure that the actual work of the necessary positive threshold voltage. GaN MOSFETs combine these features as the first examples. The Toyota Central Research Institute has successfully developed the pn junction of GaN by the new ion implantation method. bsm150gt120dn2
"New generation of power electronics industry" for the Cabinet Office of the development of strategic innovation to create a part of the plan. In the future, the research team will start from the chip to the formation of components, processing technology, basic physical interpretation and other aspects to test its practicality, in particular, to produce vertical components in order to pass through the high current.