The world's first semiconductor-free microelectronics loops, conductive properties increased by 10 times

Recently, engineers at the University of California, San Diego, used metamaterials to develop the world's first semiconductor-free optoelectronic microelectronic device, which is excited only by low-voltage, low-power lasers , Electrical conductivity compared to the traditional increase of 10 times. The technology is conducive to the manufacture of faster, higher power microelectronic devices, and is expected to create more efficient solar panels.

Existing traditional microelectronic devices, such as transistors, the performance of which will eventually be limited by the performance of its constituent materials. For example, the nature of the semiconductor itself limits the conductivity of the device or the flow of electrons. Because the semiconductor has a so-called bandgap, which means that the need to exert some external energy to promote the electrons jump through the bandgap. In addition, the electron velocity is also limited, because when the electrons through the semiconductor, always with the semiconductor atoms inside the collision. SKM100GB128DN

UC San Diego professor of electrical engineering, Dan Sievenpiper led the Applied Electromagnetics Group to explore the use of space free electrons instead of semiconductors to overcome the limitations of traditional electronic devices. "And we want to do it at the micro level," says Ebrahim Forati, the study's lead author.

However, the process of releasing electrons from the material is challenging. This process requires either high voltage (at least 100 volts) and high power UV lasers, or extremely high temperatures (over 1000 degrees Fahrenheit), which are impractical for micrometers and nanoscale electronic devices.

(SEM) images of semiconductor ultra-fine surfaces (top right, bottom) on semiconductor microelectronic devices (top left) and thereon. Image courtesy of UC San Diego Applied Electromagnetics Group

In response to this challenge, the Western Piper team designed a device that could release electrons from the material, and the release conditions were not so critical.

The device consists of a silicon substrate, a silicon dioxide spacer, and a top surface layer of an engineering surface called a "metasurface." The superfine surface consists of a parallel striped Au (gold) array and a mushroom-like Au nanostructure array thereon. QM100HY-H

Au superficial surfaces are designed to produce hot spots with a high intensity electric field when a low DC voltage (less than 10 volts) and a low power infrared laser are applied at the same time. These "hot spots" Of the energy sufficient to electrons from the metal "pull" out, thus releasing free electrons.

Device test results show that the conductivity increased by 10 times. "This means more free electrons can be manipulated," said Ibrahim.

"Of course, this does not replace all the semiconductor devices, but for some specific applications, this may be the best solution, such as high-frequency or high-power devices."

The researchers said that the current special Au super-Ying surface is only proof-of-concept design, for different types of microelectronic devices, also need to be different super-Ying surface design and optimization. Researchers said the next step is to understand the scalability of these devices and their performance limitations. "

In addition to electronics applications, the team is also exploring other applications of this technology, such as photochemistry, photocatalysis, etc., in order to achieve a new type of photovoltaic devices or environmental applications.