Industry Analysis
GaN power device market is expected to grow at a rate of 49.95% during the forecast period of 2021 to 2028, according to a report by Data Bridge Market Research. The report provides an analysis of various factors expected to impact the market growth during the forecast period. GaN transistors have emerged as a superior alternative to silicon-based transistors, with the ability to create more compact devices with higher resistance values and breakdown voltages compared to silicon devices.
A meticulous study of the competitive landscape of the market has been given in the GaN Power Device Market survey document along with the insights of the companies, financial status, trending developments, mergers, acquisitions and SWOT analysis. This market research will give a clear and specific idea to the readers about the overall market to take valuable decisions. The document focuses on the leading global industry players providing information such as company profiles, specifications, capacity, cost, revenue and contact information. An influential Data bridge market research report also offers comprehensive statistics on important aspects such as growth drivers, challenges and industry prospects.
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Market Insights and Scope
The growth of the GaN power device market is being fueled by the large revenue generated from consumer electronics and automotive industries, as well as the wide bandgap properties of GaN that support innovation. The success of GaN in RF-power electronics and growing adoption of GaN RF power devices in military, defense, and aerospace industries are also driving the market's growth. However, competition from silicon devices in high-voltage power applications may hinder the growth of the GaN power device market. The potential use of GaN in 5G infrastructure applications in electric and hybrid electric vehicles provides a promising opportunity for the market's growth. However, rising material and construction costs, as well as design difficulties, may pose challenges to the market's growth in the near future.
Additionally, the credible GaN Power Device Market report helps the manufacturer in finding out the effectiveness of the existing channels of distribution, advertising programs, or media, selling methods and the best way of distributing the goods to the eventual consumers. Taking up such market research report is all the time beneficial for any company whether it is a small scale or large scale, for marketing of products or services. It makes effortless for Semiconductors and Electronics industry to visualize what is already available in the market, what market anticipates, the competitive environment, and what should be done to surpass the competitor.
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Industry Segmentation and Size
• On the basis of device type, the GaN power device market is segmented into power device, RF power device, GaN power modules, GaN power discrete devices, GaN power ICs. Power device is further sub segmented into discrete power device and integrated power device.
• On the basis of application, the GaN power device market is segmented into power drives, supply and inverter, radio frequency. Power drives is further sub segmented into EV drives, industrial drives and light detection and ranging.
• On the basis of technology, the GaN power device market is segmented into 4h-SIC MOSFET, HEMT, others.
• On the basis of wafer material, the GaN power device market is segmented into GaN SiC, GaN Si.
• On the basis of wafer size, the GaN power device market is segmented into less than 150mm, 150mm-500mm, more than 500 mm.
Market Country Level Analysis
The countries covered in the GaN power device market report are the
• U.S., Canada and Mexico in North America, Brazil, Argentina and Rest of South America as part of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe in Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA).
Industry Share Analysis
The major players covered in the GaN power device market report are
• Cree, Inc., Infineon Technologies AG, Qorvo, Inc., MACOM, Microsemi, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation., GaN Systems, Navitas Semiconductor., Toshiba Electronic Devices & Storage Corporation, Exagan., VisIC Technologies, Integra Technologies, Inc., Transphorm Inc., GaNpower, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated., Ampleon, Northrop Grumman, Dialog Semiconductor, among other domestic and global players. Market share data is available for global, North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America separately.
GaN Power Device Market Report Answers the Following Questions:
What are the major drivers for the growth of GaN power device market?
What is the significance of GaN material's wide bandgap property in the market?
How is the GaN RF power device contributing to the growth of GaN power device market?
What are the challenges faced by GaN power device market in high-voltage power applications?
How is the potential utilization of GaN in 5G infrastructure contributing to the market growth?
What are the factors affecting the cost of material and construction in the GaN power device market?
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